Invention Grant
- Patent Title: Method of forming semiconductor device including protrusion type isolation layer
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Application No.: US14812873Application Date: 2015-07-29
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Publication No.: US09741611B2Publication Date: 2017-08-22
- Inventor: Dong-hyun Kim , Jai-kyun Park
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-Si, Gyeonggi-Do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-Si, Gyeonggi-Do
- Agency: Lee & Morse, P.C.
- Priority: KR10-2009-0031427 20090410
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L21/336 ; H01L21/768 ; H01L27/108 ; H01L21/308 ; H01L21/762 ; H01L21/02 ; H01L27/02 ; H01L29/66
Abstract:
A semiconductor device may include a semiconductor layer having a convex portion and a concave portion surrounding the convex portion. The semiconductor device may further include a protrusion type isolation layer filling the concave portion and extending upward so that an uppermost surface of the isolation layer is a at level higher that an uppermost surface of the convex portion.
Public/Granted literature
- US20150333151A1 METHOD OF FORMING SEMICONDUCTOR DEVICE INCLUDING PROTRUSION TYPE ISOLATION LAYER Public/Granted day:2015-11-19
Information query
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