Structures for contacting a fin-type field-effect transistor (FinFET) and associated methods. First and second gate structures are formed. The second gate structure is separated from the first gate structure by a space that crosses over a top surface of a fin. At least one layer is formed in the space, and a hardmask layer is formed on the at least one layer. An opening is formed in the hardmask layer at a location that is above the top surface of the fin and that is between the first gate structure and the second gate structure. The at least one layer is etched at the location of the opening to form a contact hole extending through the at least one layer to the top surface of the fin. A contact, which is formed in the contact hole, is coupled with the top surface of the fin.