A through-silicon-via (TSV) structure is formed within a trench located within a semiconductor structure. The TSV structure may include a first electrically conductive liner layer located on an outer surface of the trench and a first electrically conductive structure located on the first electrically conductive liner layer, whereby the first electrically conductive structure partially fills the trench. A second electrically conductive liner layer is located on the first electrically conductive structure, a dielectric layer is located on the second electrically conductive liner layer, while a third electrically conductive liner layer is located on the dielectric layer. A second electrically conductive structure is located on the third electrically conductive liner layer, whereby the second electrically conductive structure fills a remaining opening of the trench.