- 专利标题： Bidirectional insulated gate bipolar transistor
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申请号： US15209745申请日： 2016-07-13
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公开(公告)号： US09741837B2公开(公告)日： 2017-08-22
- 发明人: Jinping Zhang , Yadong Shan , Gaochao Xu , Xin Yao , Jingxiu Liu , Zehong Li , Min Ren , Bo Zhang
- 申请人： UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA , INSTITUTE OF ELECTRONIC AND INFORMATION ENGINEERING IN DONGGUAN, UESTC
- 申请人地址： CN Chengdu CN Dongguan
- 专利权人： UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA,INSTITUTE OF ELECTRONIC AND INFORMATION ENGINEERING IN DONGGUAN, UESTC
- 当前专利权人： UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA,INSTITUTE OF ELECTRONIC AND INFORMATION ENGINEERING IN DONGGUAN, UESTC
- 当前专利权人地址： CN Chengdu CN Dongguan
- 代理机构： Matthias Scholl P.C.
- 代理商 Matthias Scholl
- 主分类号： H01L29/73
- IPC分类号： H01L29/73 ; H01L29/739 ; H01L29/06 ; H01L29/10 ; H01L29/423
摘要：
A bidirectional IGBT device, including a cellular structure including: two MOS structures, a substrate drift layer, two highly doped buried layers operating for carrier storage or field stop, two metal electrodes, and isolating dielectrics. Each MOS structure includes: a body region, a heavily doped source region, a body contact region, and a gate structure. Each gate structure includes: a gate dielectric and a gate conductive material. The two MOS structures are symmetrically disposed on the top surface and the back surface of the substrate drift layer. The heavily doped source region and the body contact region are disposed in the body region and independent from each other, and both surfaces of the heavily doped source region and the body contact region are connected to each of the two metal electrodes. The gate dielectric separates the gate conductive material from a channel region of each of the MOS structures.
公开/授权文献
- US20160322483A1 BIDIRECTIONAL INSULATED GATE BIPOLAR TRANSISTOR 公开/授权日：2016-11-03
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