- 专利标题： Bidirectional semiconductor switch with passive turnoff
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申请号： US15213389申请日： 2016-07-18
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公开(公告)号： US09742385B2公开(公告)日： 2017-08-22
- 发明人: William C. Alexander
- 申请人： Ideal Power Inc.
- 申请人地址： US TX Austin
- 专利权人： Ideal Power, Inc.
- 当前专利权人： Ideal Power, Inc.
- 当前专利权人地址： US TX Austin
- 代理机构： Groover & Associates PLLC
- 代理商 Gwendolyn G. Corcoran; Robert O. Groove, III
- 主分类号： H01L29/732
- IPC分类号： H01L29/732 ; H03K5/08 ; H01L29/872 ; H01L29/747 ; H03K17/74 ; H01L29/417 ; H01L29/423 ; H01L29/73 ; H01L29/737 ; H01L29/739 ; H01L29/74 ; H01L29/06 ; H01L29/08 ; H01L29/10 ; H01L29/16 ; H03K17/68
摘要：
A symmetrically-bidirectional bipolar transistor circuit where the two base contact regions are clamped, through a low-voltage diode and a resistive element, to avoid bringing either emitter junction to forward bias. This avoids bipolar gain in the off state, and thereby avoids reduction of the withstand voltage due to bipolar gain.
公开/授权文献
- US20170047922A1 Bidirectional Semiconductor Switch with Passive Turnoff 公开/授权日：2017-02-16