Invention Grant
- Patent Title: Electronic device for heating an integrated structure, for example an MOS transistor
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Application No.: US14960052Application Date: 2015-12-04
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Publication No.: US09746863B2Publication Date: 2017-08-29
- Inventor: Philippe Galy , Sotirios Athanasiou , Julien Le Coz , Sylvain Engels
- Applicant: STMicroelectronics SA
- Applicant Address: FR Montrouge
- Assignee: STMicroelectronics SA
- Current Assignee: STMicroelectronics SA
- Current Assignee Address: FR Montrouge
- Agency: Gardere Wynne Sewell LLP
- Priority: FR1555459 20150616
- Main IPC: H01L23/34
- IPC: H01L23/34 ; G05F1/46 ; H01L27/02 ; H01L27/06

Abstract:
An electronic device includes an integrated circuit with a MOS transistor and a heating circuit electrically coupled to at least two points of one of the source or drain semiconductive region of the transistor. A portion of the source or drain semiconductive region between the two points forms a resistive element. The heating circuit is configured to cause a current to circulate through the resistive element between the two points to heat an active region of the transistor.
Public/Granted literature
- US20160370815A1 ELECTRONIC DEVICE FOR HEATING AN INTEGRATED STRUCTURE, FOR EXAMPLE AN MOS TRANSISTOR Public/Granted day:2016-12-22
Information query
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