- 专利标题： Silicon carbide semiconductor device with a trench
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申请号： US15022012申请日： 2013-10-17
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公开(公告)号： US09748393B2公开(公告)日： 2017-08-29
- 发明人: Yoichiro Tarui
- 申请人： Mitsubishi Electric Corporation
- 申请人地址： JP Tokyo
- 专利权人： Mitsubishi Electric Corporation
- 当前专利权人： Mitsubishi Electric Corporation
- 当前专利权人地址： JP Tokyo
- 代理机构： Studebaker & Brackett PC
- 国际申请： PCT/JP2013/078125 WO 20131017
- 国际公布： WO2015/056318 WO 20150423
- 主分类号： H01L29/15
- IPC分类号： H01L29/15 ; H01L29/78 ; H01L21/04 ; H01L29/66 ; H01L29/16 ; H01L29/417 ; H01L29/423 ; H01L29/06 ; H01L29/12 ; H01L29/788 ; H01L29/08
摘要：
It is an object of the present invention to provide a silicon carbide semiconductor device that reduces a channel resistance and increases reliability of a gate insulating film. The present invention includes a trench partially formed in a surface layer of an epitaxial layer, a well layer formed along side surfaces and a bottom surface of the trench, a source region formed in a surface layer of the well layer on the bottom surface of the trench, a gate insulating film, and a gate electrode. The gate insulating film is formed along the side surfaces of the trench and has one end formed so as to reach the source region. The gate electrode is formed along the side surfaces of the trench and formed on the gate insulating film.
公开/授权文献
- US20160225905A1 SILICON CARBIDE SEMICONDUCTOR DEVICE 公开/授权日：2016-08-04
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