- 专利标题: Power semiconductor module and method for stabilizing thereof
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申请号: US15223826申请日: 2016-07-29
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公开(公告)号: US09748941B2公开(公告)日: 2017-08-29
- 发明人: Minki Kim , Hyun-Gyu Jang , Dong Yun Jung , Sang Choon Ko , Hyun Soo Lee , Chi Hoon Jun
- 申请人: Electronics and Telecommunications Research Institute
- 申请人地址: KR Daejeon
- 专利权人: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
- 当前专利权人: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
- 当前专利权人地址: KR Daejeon
- 代理机构: Rabin & Berdo, P.C.
- 优先权: KR10-2015-0149694 20151027; KR10-2016-0040357 20160401
- 主分类号: H03K17/081
- IPC分类号: H03K17/081 ; H01L29/778 ; H01L27/088 ; H01L29/20
摘要:
Provided is a stabilizing circuit structure using a sense field effect transistor (sense-FET). A power semiconductor module includes a depletion-mode field effect transistor (D-mode FET) and the sense FET that has same structure as the D-mode FET and varies in area. Also the power semiconductor module includes not only an enhancement-mode field effect transistor (E-mode FET), but also the stabilizing circuit including circuit elements such as a resistor, a capacitor, an inductor, or a diode.
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