发明授权
- 专利标题: Deposition method
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申请号: US14626220申请日: 2015-02-19
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公开(公告)号: US09752227B2公开(公告)日: 2017-09-05
- 发明人: Eiji Fuchita , Eiji Tokizaki , Eiichi Ozawa
- 申请人: Fuchita Nanotechnology Ltd.
- 申请人地址: JP Chiba
- 专利权人: FUCHITA NANOTECHNOLOGY LTD.
- 当前专利权人: FUCHITA NANOTECHNOLOGY LTD.
- 当前专利权人地址: JP Chiba
- 代理机构: Saliwanchik, Lloyd & Eisenschenk
- 优先权: JP2014-130348 20140625; JP2014-258652 20141222
- 主分类号: B05D1/00
- IPC分类号: B05D1/00 ; C23C14/34 ; H01J37/34 ; C09D5/00 ; C23C24/02 ; B05D1/12 ; B05D1/06
摘要:
A deposition method includes: introducing a gas into an airtight container containing electrically insulated raw material particles to generate an aerosol of the raw material particles; transferring the aerosol to a deposition chamber through a transfer tubing connected to the airtight container, the deposition chamber having a pressure maintained to be lower than that of the airtight container; injecting the aerosol from a nozzle mounted on a tip of the transfer tubing toward a target placed on the deposition chamber to cause the raw material particles to collide with the target, thereby causing the raw material particles to be positively charged; generating fine particles of the raw material particles by discharge of the charged raw material particles; and depositing the fine particles on a substrate placed on the deposition chamber.
公开/授权文献
- US20150376771A1 DEPOSITION METHOD, DEPOSITION APPARATUS, AND STRUCTURE 公开/授权日:2015-12-31
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