Invention Grant
- Patent Title: Method for manufacturing semiconductor device
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Application No.: US15376336Application Date: 2016-12-12
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Publication No.: US09754793B2Publication Date: 2017-09-05
- Inventor: Shinichi Nakao , Shunsuke Ochiai , Yusuke Oshiki , Kei Watanabe , Mitsuhiro Omura , Kosuke Horibe , Atsuko Sakata , Junichi Wada , Soichi Yamazaki , Masayuki Kitamura , Yuya Matsubara
- Applicant: Toshiba Memory Corporation
- Applicant Address: JP Minato-ku
- Assignee: TOSHIBA MEMORY CORPORATION
- Current Assignee: TOSHIBA MEMORY CORPORATION
- Current Assignee Address: JP Minato-ku
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2015-119821 20150612
- Main IPC: H01L21/336
- IPC: H01L21/336 ; H01L21/3065 ; H01L21/308 ; H01L27/11582
Abstract:
According to one embodiment, a method for manufacturing a semiconductor device includes forming a mask layer on a layer to be etched, the mask layer containing tungsten and boron, a composition ratio of the tungsten being not less than 30%, patterning the mask layer, and performing a dry etching to the layer to be etched using the mask layer being patterned, and forming a hole or a slit in the layer to be etched.
Public/Granted literature
- US20170092505A1 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE Public/Granted day:2017-03-30
Information query
IPC分类:
