Invention Grant
- Patent Title: Method for fabricating multi-chip stack structure
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Application No.: US14524166Application Date: 2014-10-27
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Publication No.: US09754927B2Publication Date: 2017-09-05
- Inventor: Chung-Lun Liu , Jung-Pin Huang , Yi-Feng Chang , Chin-Huang Chang
- Applicant: Siliconware Precision Industries Co., Ltd.
- Applicant Address: TW Taichung
- Assignee: Siliconware Precision Industries Co., Ltd.
- Current Assignee: Siliconware Precision Industries Co., Ltd.
- Current Assignee Address: TW Taichung
- Agency: Mintz Levin Cohn Ferris Glovsky and Popeo, P.C.
- Agent Peter F. Corless; Steven M. Jensen
- Priority: TW96145521A 20071130
- Main IPC: H01L29/15
- IPC: H01L29/15 ; H01L25/00 ; H01L23/00 ; H01L25/065 ; H01L21/56 ; H01L23/31 ; H01L25/18

Abstract:
A multi-chip stack structure and a method for fabricating the same are provided. The method for fabricating a multi-chip stack structure includes disposing a first chip group comprising a plurality of first chips on a chip carrier by using a step-like manner, disposing a second chip on the first chip on top of the first chip group, electrically connecting the first chip group and the second chip to the chip carrier through bonding wires, using film over wire (FOW) to stack a third chip on the first and the second chips with an insulative film provided therebetween, wherein the insulative film covers part of the ends of the bonding wires of the first chip on the top of the first group and at least part of the second chip, and electrically connecting the third chip to the chip carrier through bonding wires, thereby preventing directly disposing on a first chip a second chip having a planar size far smaller than that of the first chip as in the prior art that increases height of the entire structure and increases the wiring bonding difficultly.
Public/Granted literature
- US20150044821A1 METHOD FOR FABRICATING MULTI-CHIP STACK STRUCTURE Public/Granted day:2015-02-12
Information query
IPC分类: