- 专利标题： Semiconductor device
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申请号： US15140888申请日： 2016-04-28
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公开(公告)号： US09755069B2公开(公告)日： 2017-09-05
- 发明人: Hiroki Fujii
- 申请人： Renesas Electronics Corporation
- 申请人地址： JP Tokyo
- 专利权人： RENESAS ELECTRONICS CORPORATION
- 当前专利权人： RENESAS ELECTRONICS CORPORATION
- 当前专利权人地址： JP Tokyo
- 代理机构： Mattingly & Malur, PC
- 优先权： JP2014-036944 20140227
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L29/06 ; H01L29/66 ; H01L29/10 ; H01L29/40 ; H01L29/423
摘要：
There is provided a semiconductor device having LDMOS transistors embedded in a semiconductor substrate to boost source-drain breakdown voltage, with arrangements to prevent fluctuations of element characteristics caused by electric field concentration so that the reliability of the semiconductor device is improved. A trench is formed over the upper surface of a separation insulating film of each LDMOS transistor, the trench having a gate electrode partially embedded therein. This structure prevents electric field concentration in the semiconductor substrate near the source-side edge of the separation insulating film.
公开/授权文献
- US20160240664A1 SEMICONDUCTOR DEVICE 公开/授权日：2016-08-18
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