- 专利标题: Semiconductor device and method of manufacturing the same
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申请号: US13537650申请日: 2012-06-29
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公开(公告)号: US09755085B2公开(公告)日: 2017-09-05
- 发明人: Ki Hong Lee , Seung Ho Pyi , Jung Yun Chang
- 申请人: Ki Hong Lee , Seung Ho Pyi , Jung Yun Chang
- 申请人地址: KR Icheon-si, Gyeonggi-do
- 专利权人: SK hynix Inc.
- 当前专利权人: SK hynix Inc.
- 当前专利权人地址: KR Icheon-si, Gyeonggi-do
- 代理机构: William Park & Associates Ltd.
- 优先权: KR10-2011-0067772 20110708; KR10-2012-0021781 20120302
- 主分类号: H01L27/088
- IPC分类号: H01L27/088 ; H01L21/8239 ; H01L29/792 ; H01L29/66 ; H01L27/11582
摘要:
A semiconductor device includes memory blocks each configured to comprise a pair of channels, each channel including a pipe channel formed in a pipe gate of the memory block and a drain-side channel and a source-side channel coupled to the pipe channel; first slits placed between the memory blocks adjacent to other memory blocks; and a second slit placed between the source-side channel and the drain-side channel of each pair of channels.
公开/授权文献
- US09634152B2 Semiconductor device and method of manufacturing the same 公开/授权日:2017-04-25