- 专利标题: Low profile electrical interconnect with fusion bonded contact retention and solder wick reduction
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申请号: US15062138申请日: 2016-03-06
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公开(公告)号: US09755335B2公开(公告)日: 2017-09-05
- 发明人: James J. Rathburn
- 申请人: HSIO Technologies, LLC
- 申请人地址: US MN Maple Grove
- 专利权人: HSIO Technologies, LLC
- 当前专利权人: HSIO Technologies, LLC
- 当前专利权人地址: US MN Maple Grove
- 主分类号: H01R12/00
- IPC分类号: H01R12/00 ; H01R12/70 ; H01R43/20 ; H01R13/405 ; H05K3/34
摘要:
An electrical interconnect and a method of making the same. A plurality of contact members are located in through holes in a substrate so distal portions of the contact members extend above a first surface of the substrate in a cantilevered configuration and proximal portions of the contact members are accessible along a second surface of the substrate. A flowable polymeric material located on the second surface of the substrate is fusion bonded to the proximal portions of the contact members so the flowable polymeric material substantially seals the through holes in the substrate. An insulator housing is bonded to the first surface of the substrate with the distal portions of the contact members located in through holes in an insulator housing, so the distal portions are accessible from a second surface of the insulator housing.
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