Invention Grant
- Patent Title: CMOS GOA circuit
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Application No.: US14786537Application Date: 2015-10-12
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Publication No.: US09761194B2Publication Date: 2017-09-12
- Inventor: Mang Zhao
- Applicant: Shenzhen China Star Optoelectronics Technology Co., Ltd. , Wuhan China Star Optoelectronics Technology Co., Ltd.
- Applicant Address: CN Shenzhen, Guangdong CN Wuhan, Hubei
- Assignee: SHENZHEN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD.,WUHAN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD.
- Current Assignee: SHENZHEN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD.,WUHAN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD.
- Current Assignee Address: CN Shenzhen, Guangdong CN Wuhan, Hubei
- Agent Leong C. Lei
- Priority: CN201510557210 20150902
- International Application: PCT/CN2015/091715 WO 20151012
- International Announcement: WO2017/035907 WO 20170309
- Main IPC: G09G3/36
- IPC: G09G3/36

Abstract:
The present invention provides a CMOS GOA circuit. The first NOR gate (Y1) and the second NOR gate (Y2) are located in the input control module (1). The two input ends of the first NOR gate (Y1) respectively receives the stage transfer signal (Q(N−1)) of the GOA unit circuit of the former stage and the global signal (Gas), and the two input ends of the second NOR gate (Y2) respectively receives the first clock signal (CK1) and the global signal (Gas). When the global signal (Gas) is high voltage level, the all the scan driving signals (G(N)) of the respective stages are controlled to be raised up to high voltage levels at the same time, and meanwhile, both the first NOR gate (Y1) and the second NOR gate (Y2) are controlled to output low voltage levels to control the inverted stage transfer signal (XQ(N)) to be high voltage level.
Public/Granted literature
- US20170162153A1 CMOS GOA CIRCUIT Public/Granted day:2017-06-08
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