- 专利标题: Optoelectronic semiconductor chip and method for fabrication thereof
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申请号: US14686364申请日: 2015-04-14
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公开(公告)号: US09761576B2公开(公告)日: 2017-09-12
- 发明人: Rainer Butendeich , Alexander Walter , Matthias Peter , Tobias Meyer , Tetsuya Taki , Hubert Maiwald
- 申请人: OSRAM Opto Semiconductors GmbH
- 申请人地址: DE Regensburg
- 专利权人: OSRAM Opto Semiconductors GmbH
- 当前专利权人: OSRAM Opto Semiconductors GmbH
- 当前专利权人地址: DE Regensburg
- 代理机构: Slater Matsil, LLP
- 优先权: DE102009060750 20091230
- 主分类号: H01L27/02
- IPC分类号: H01L27/02 ; H01L33/02 ; H01L31/0236 ; H01L31/0304 ; H01L31/0352 ; H01L33/06 ; H01L33/08 ; H01L33/32 ; H01L27/15 ; H01L33/24
摘要:
An optoelectronic semiconductor chip has a first semiconductor layer sequence which comprises a multiplicity of microdiodes, and a second semiconductor layer sequence which comprises an active region. The first semiconductor layer sequence and the second semiconductor layer sequence are based on a nitride compound semiconductor material, the first semiconductor layer sequence is before the first semiconductor layer sequence in the direction of growth, and the microdiodes form an ESD protection for the active region.
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