A semiconductor light emitting device in which adhesion between an insulating layer and a semiconductor layer is improved while maintaining the ability of the insulating layer to limit the direction of current flow. The semiconductor light emitting device includes a semiconductor layer, a first electrode and a second electrode arranged to interpose the semiconductor layer therebetween, an insulating layer provided to the semiconductor layer at the same side as the second electrode and opposite to the first electrodes so as to surround the periphery of the second electrode, a first metal layer covering the second electrode and the insulating layer, and a second metal layer which has a thickness smaller than the thickness of the second electrode and is provided between the semiconductor layer and the insulating layer.