Invention Grant
- Patent Title: Light emitting diode and method of manufacturing the same
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Application No.: US15264420Application Date: 2016-09-13
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Publication No.: US09761762B2Publication Date: 2017-09-12
- Inventor: Hyoung Jin Lim , Chan Seob Shin , Kyu Ho Lee , Tae Gyun Kim , Sung Won Tae
- Applicant: Seoul Viosys Co., Ltd.
- Applicant Address: KR Ansan-si
- Assignee: Seoul Viosys Co., Ltd.
- Current Assignee: Seoul Viosys Co., Ltd.
- Current Assignee Address: KR Ansan-si
- Agency: Perkins Coie LLP
- Priority: KR10-2014-0048180 20140422
- Main IPC: H01L33/38
- IPC: H01L33/38 ; H01L33/22 ; H01L33/42

Abstract:
Disclosed herein are a light emitting diode including a plurality of protrusions including zinc oxide and a method for manufacturing the same. According to an exemplary embodiment of the present disclosure, the light emitting diode includes: a substrate; a nitride light emitting structure disposed on the substrate; and a transparent electrode layer disposed on the nitride light emitting structure, wherein the transparent electrode layer includes a plurality of protrusions, the plurality of protrusions each have a lower portion and an upper portion, and a side of the lower portion and a side of the upper portion have different gradients.
Public/Granted literature
- US20170005231A1 LIGHT EMITTING DIODE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2017-01-05
Information query
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