Invention Grant
- Patent Title: Optoelectronic semiconductor chip encapsulated with an ALD layer and corresponding method for production
-
Application No.: US14760454Application Date: 2014-01-14
-
Publication No.: US09761770B2Publication Date: 2017-09-12
- Inventor: Johann Eibl , Sebastian Taeger , Lutz Höppel , Karl Engl , Stefanie Rammelsberger , Markus Maute , Michael Huber , Rainer Hartmann , Georg Hartung
- Applicant: OSRAM Opto Semiconductors GmbH
- Applicant Address: DE Regensburg
- Assignee: OSRAM Opto Semiconductors GmbH
- Current Assignee: OSRAM Opto Semiconductors GmbH
- Current Assignee Address: DE Regensburg
- Agency: Slater Matsil, LLP
- Priority: DE102013100818 20130128
- International Application: PCT/EP2014/050574 WO 20140114
- International Announcement: WO2014/114524 WO 20140731
- Main IPC: H01L33/00
- IPC: H01L33/00 ; H01L33/54 ; H01L33/44 ; H01L33/60 ; H01L33/62 ; H01L21/02 ; H01L33/52 ; H01L33/40

Abstract:
An optoelectronic semiconductor chip includes a semiconductor body with an active region provided for generating electromagnetic radiation, a first mirror layer provided for reflecting the electromagnetic radiation, a first encapsulation layer formed with an electrically insulating material, and a carrier provided for mechanically supporting the first encapsulation layer, the first mirror layer and the semiconductor body. The first mirror layer is arranged between the carrier and the semiconductor body. The first encapsulation layer is arranged between the carrier and the first mirror layer. The first encapsulation layer is an ALD layer.
Public/Granted literature
- US20150372203A1 Optoelectronic Semiconductor Chip Encapsulated with an ALD Layer and Corresponding Method for Production Public/Granted day:2015-12-24
Information query
IPC分类: