Invention Grant
- Patent Title: Methods and systems for interconnecting parallel IGBT modules
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Application No.: US14929173Application Date: 2015-10-30
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Publication No.: US09762146B2Publication Date: 2017-09-12
- Inventor: Steven E. Schulz , David Tang , Silva Hiti
- Applicant: Faraday&Future Inc.
- Applicant Address: US CA Gardena
- Assignee: FARADAY&FUTURE INC.
- Current Assignee: FARADAY&FUTURE INC.
- Current Assignee Address: US CA Gardena
- Agency: Finnegan, Henderson, Farabow, Garrett & Dunner, LLP
- Main IPC: G05F1/569
- IPC: G05F1/569 ; H02M7/5387 ; H02M7/537

Abstract:
A system for interconnecting parallel insulated gate bipolar transistor (IGBT) modules is provided. A pair of switches selected from a plurality of the IGBT modules are assigned to a driver integrated circuit (IC). In the pair of switches, a master IGBT switch is selected, the other switch being a slave IGBT switch. A command signal from the driver IC is electrically coupled to both the master and slave IGBT switches. The master and slave IGBT switches both have protective circuits; however, the driver IC is electrically coupled to the protective circuits of the selected master IGBT switch only. The protective circuits include temperature and current sense circuits. The plurality of the IGBT modules may be formed by two hexpack power modules. The modules are configured such that only a single driver IC is needed for each pair of parallel IGBT switches, with equal current sharing of the paralleled modules.
Public/Granted literature
- US20170126145A1 Methods and Systems for Interconnecting Parallel IGBT Modules Public/Granted day:2017-05-04
Information query
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