- 专利标题: Gas barrier laminated body, method for producing same, member for electronic device, and electronic device
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申请号: US14004960申请日: 2012-02-27
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公开(公告)号: US09763345B2公开(公告)日: 2017-09-12
- 发明人: Satoshi Naganawa
- 申请人: Satoshi Naganawa
- 申请人地址: JP Tokyo
- 专利权人: LINTEC CORPORATION
- 当前专利权人: LINTEC CORPORATION
- 当前专利权人地址: JP Tokyo
- 代理机构: Birch, Stewart, Kolasch & Birch, LLP
- 优先权: JP2011-075156 20110330
- 国际申请: PCT/JP2012/054706 WO 20120227
- 国际公布: WO2012/132696 WO 20121004
- 主分类号: H05K5/02
- IPC分类号: H05K5/02 ; H05K13/00 ; C23C14/48 ; C23C16/30 ; C23C16/56 ; H01J37/32
摘要:
Provided is a gas barrier laminate that can be produced inexpensively as compared with the case of using an inorganic film without requiring a complex production process, and exhibits an excellent gas barrier capability and excellent flexibility, and also provided are a method for producing the gas barrier laminate, an electronic device member that includes the gas barrier laminate, and an electronic device that includes the electronic device member. A gas barrier laminate including a base and a gas barrier layer, the gas barrier layer being provided on the base, the gas barrier layer being obtained by implanting ions into an organosilicon compound thin film formed by a CVD method that utilizes an organosilicon compound as a deposition raw material, a method for producing the gas barrier laminate, an electronic device member that includes the gas barrier laminate, and an electronic device that includes the electronic device member are provided.
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