Invention Grant
- Patent Title: Method of forming a semiconductor structure
-
Application No.: US15169472Application Date: 2016-05-31
-
Publication No.: US09768029B2Publication Date: 2017-09-19
- Inventor: Chun-Hsien Lin , Min-Hsien Chen
- Applicant: United Microelectronics Corp.
- Applicant Address: TW Hsinchu
- Assignee: United Microelectronics Corp.
- Current Assignee: United Microelectronics Corp.
- Current Assignee Address: TW Hsinchu
- Agency: J. C. Patents
- Main IPC: H01L21/28
- IPC: H01L21/28 ; H01L29/49 ; H01L29/66 ; H01L21/8238 ; H01L21/285 ; H01L29/51 ; H01L29/165
Abstract:
A method of forming a semiconductor device is disclosed. A substrate having a dielectric layer thereon is provided. The dielectric layer has a gate trench therein and a gate dielectric layer is formed on a bottom of the gate trench. A work function metal layer and a top barrier layer are sequentially formed in the gate trench. A treatment is performed to the top barrier layer so as to form a silicon-containing top barrier layer. A low-resistivity metal layer is formed in the gate trench.
Public/Granted literature
- US20160276157A1 METHOD OF FORMING A SEMICONDUCTOR STRUCTURE Public/Granted day:2016-09-22
Information query
IPC分类:
