- 专利标题： Semiconductor device having a non-depletable doping region
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申请号： US15196838申请日： 2016-06-29
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公开(公告)号： US09768291B2公开(公告)日： 2017-09-19
- 发明人: Franz Hirler
- 申请人： Infineon Technologies Austria AG
- 申请人地址： AT Villach
- 专利权人： Infineon Technologies Austria AG
- 当前专利权人： Infineon Technologies Austria AG
- 当前专利权人地址： AT Villach
- 代理机构： Murphy, Bilak & Homiller, PLLC
- 优先权： DE102015110484 20150630
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L29/06 ; H01L29/10 ; H01L29/36 ; H01L29/40 ; H01L29/66 ; H01L29/73 ; H01L29/739 ; H01L21/266
摘要：
A semiconductor device includes a plurality of compensation regions of a vertical electrical element arrangement, a plurality of drift regions of the vertical electrical element arrangement and a non-depletable doping region. The compensation regions of the plurality of compensation regions are arranged in a semiconductor substrate of the semiconductor device. Further, the plurality of drift regions of the vertical electrical element arrangement are arranged in the semiconductor substrate within a cell region of the semiconductor device. The plurality of drift regions and the plurality of compensation regions are arranged alternatingly in a lateral direction. The non-depletable doping region extends laterally from an edge of the cell region towards an edge of the semiconductor substrate. The non-depletable doping region has a doping non-depletable by voltages applied to the semiconductor device during blocking operation.
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