Invention Grant
- Patent Title: Semiconductor device
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Application No.: US14657345Application Date: 2015-03-13
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Publication No.: US09773527B2Publication Date: 2017-09-26
- Inventor: Itaru Yamaguchi , Masaru Koyanagi , Hiroaki Nakano
- Applicant: TOSHIBA MEMORY CORPORATION
- Applicant Address: JP Minato-ku
- Assignee: TOSHIBA MEMORY CORPORATION
- Current Assignee: TOSHIBA MEMORY CORPORATION
- Current Assignee Address: JP Minato-ku
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Main IPC: G11C8/00
- IPC: G11C8/00 ; G11C5/02 ; G11C8/12 ; G11C16/20 ; H01L25/065 ; G11C5/14 ; H01L23/31 ; G11C29/44

Abstract:
According to one embodiment, electrodes are provided in stacked M (M is an integer of 2 or more) semiconductor chips, a transmission units are provided for the semiconductor chips and, based on a chip identification information on a semiconductor chip in the present stage, transmits the chip identification information on a semiconductor chip in the next stage via the electrodes, or transmit a data for setting the chip identification information, and the direction in which an external signal is sent via the electrodes is opposite to the direction in which the chip identification information is transmitted via the electrodes.
Public/Granted literature
- US20160078906A1 SEMICONDUCTOR DEVICE Public/Granted day:2016-03-17
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