- 专利标题： Semiconductor device and manufacturing method thereof
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申请号： US15009085申请日： 2016-01-28
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公开(公告)号： US09773745B2公开(公告)日： 2017-09-26
- 发明人: Ying-Ju Chen , Hsien-Wei Chen
- 申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- 申请人地址： TW Hsinchu
- 专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- 当前专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- 当前专利权人地址： TW Hsinchu
- 代理机构： WPAT, P.C., Intellectual Property Attorneys
- 代理商 Anthony King
- 主分类号： H01L23/00
- IPC分类号： H01L23/00 ; H01L21/78 ; H01L23/31 ; H01L23/58 ; H01L21/56
摘要：
A semiconductor device includes a substrate layer, a redistribution layer (RDL) disposed over the substrate layer, a conductive bump disposed over the RDL, and a molding disposed over the RDL and surrounding the conductive bump, wherein the molding includes a protruded portion laterally protruded from a sidewall of the substrate layer and away from the conductive bump.
公开/授权文献
- US20160148886A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 公开/授权日：2016-05-26
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