Invention Grant
- Patent Title: Transistor having an active channel region
-
Application No.: US15369951Application Date: 2016-12-06
-
Publication No.: US09773782B2Publication Date: 2017-09-26
- Inventor: Trudy Benjamin
- Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.
- Applicant Address: US TX Houston
- Assignee: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.
- Current Assignee: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.
- Current Assignee Address: US TX Houston
- Agency: HP Inc.—Patent Department
- Main IPC: H01L27/06
- IPC: H01L27/06 ; H01L29/78 ; H01L21/8234 ; H01L27/088 ; H01L29/66 ; B41J2/14 ; H01L29/10
Abstract:
In some examples, a transistor includes a drain, a channel, and a gate. The channel surrounds the drain and has a channel length to width ratio. The gate is over the channel to provide an active channel region that has an active channel region length to width ratio that is greater than the channel length to width ratio.
Public/Granted literature
- US20170084609A1 TRANSISTOR HAVING AN ACTIVE CHANNEL REGION Public/Granted day:2017-03-23
Information query
IPC分类:
