Invention Grant
- Patent Title: Semiconductor device, memory device, electronic device, or method for driving the semiconductor device
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Application No.: US15338610Application Date: 2016-10-31
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Publication No.: US09773787B2Publication Date: 2017-09-26
- Inventor: Takanori Matsuzaki
- Applicant: Semiconductor Energy Laboratory Co., Ltd.
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Fish & Richardson P.C.
- Priority: JP2015-216214 20151103
- Main IPC: G11C5/06
- IPC: G11C5/06 ; H01L27/105 ; H01L27/12 ; H01L29/786 ; H01L21/78 ; H01L21/48 ; H01L23/00 ; H01L21/56 ; H01L23/544 ; H01L21/66 ; H01L23/495 ; H01L23/31 ; G11C5/10 ; G11C11/419 ; G06K19/077

Abstract:
A semiconductor device with an improved arithmetic processing speed and a decreased circuit size, and its driving method are provided. In the semiconductor device, a first terminal of a first transistor and a gate of a second transistor are electrically connected to a first terminal of a capacitor, and a control circuit is electrically connected to a second terminal of the capacitor. The control circuit supplies a first potential to the second terminal of the capacitor, in other words, adds a value corresponding to the first potential to the value of first data previously retained in the gate of the second transistor in order to obtain second data. In the second transistor, the second data, specifically, a third potential commensurate with the potential of the gate will be output from a second terminal when a second potential is supplied to a first terminal.
Public/Granted literature
- US20170125420A1 SEMICONDUCTOR DEVICE, MEMORY DEVICE, ELECTRONIC DEVICE, OR METHOD FOR DRIVING THE SEMICONDUCTOR DEVICE Public/Granted day:2017-05-04
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