Invention Grant
- Patent Title: Scalable orthogonal spin transfer magnetic random access memory devices with reduced write error rates
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Application No.: US14622453Application Date: 2015-02-13
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Publication No.: US09773837B2Publication Date: 2017-09-26
- Inventor: Andrew Kent
- Applicant: New York University
- Applicant Address: US NY New York
- Assignee: NEW YORK UNIVERSITY
- Current Assignee: NEW YORK UNIVERSITY
- Current Assignee Address: US NY New York
- Agency: Foley & Lardner LLP
- Main IPC: G11C11/00
- IPC: G11C11/00 ; H01L27/22 ; H01L43/08 ; G11C11/16 ; H01L43/02 ; H01L43/10 ; H01F10/32

Abstract:
A magnetic device includes a pinned polarizing magnetic layer having a magnetic vector parallel to a plane of the pinned polarizing magnetic layer. The magnetic device also includes a free layer, separated from the polarizing magnetic layer by a first non-magnetic layer, having a magnetization vector with a changeable magnetization direction. The changeable magnetization vector is configured to change to a first state upon application of a first current of a first polarity and to change to a second state upon application of a second current of a second, opposite polarity. The magnetic device also has a reference layer having a magnetic vector perpendicular to the plane of the reference layer and separated from the free layer by a second non-magnetic layer.
Public/Granted literature
- US20150162379A1 SCALABLE ORTHOGONAL SPIN TRANSFER MAGNETIC RANDOM ACCESS MEMORY DEVICES WITH REDUCED WRITE ERROR RATES Public/Granted day:2015-06-11
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