Invention Grant
- Patent Title: Semiconductor device and method of fabricating the same
-
Application No.: US14206373Application Date: 2014-03-12
-
Publication No.: US09773869B2Publication Date: 2017-09-26
- Inventor: Yong-Min Cho , Hyun-Jae Kang , Dong-Il Bae
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si, Gyeonggi-Do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si, Gyeonggi-Do
- Agency: F. Chau & Associates, LLC
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/08 ; H01L29/66 ; H01L29/165
Abstract:
A semiconductor device is provided. A substrate includes a fin. The fin extends in a first direction. A gate structure is disposed on a first region of the fin. The gate structure extends in a second direction crossing the first direction. A source/drain is disposed on a second region of the fin. The first source/drain is disposed on at least one sidewall of the gate structure. A top surface of the first region is lower than a top surface of the second region.
Public/Granted literature
- US20150263172A1 SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME Public/Granted day:2015-09-17
Information query
IPC分类:
