Invention Grant
- Patent Title: Fin field effect transistor and method for fabricating the same
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Application No.: US14941664Application Date: 2015-11-16
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Publication No.: US09773871B2Publication Date: 2017-09-26
- Inventor: Che-Cheng Chang , Chih-Han Lin
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Jianq Chyun IP Office
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/10 ; H01L27/088 ; H01L29/06 ; H01L29/08 ; H01L21/8234 ; H01L21/762 ; H01L21/265 ; H01L21/02
Abstract:
A FinFET includes a substrate, a plurality of insulators disposed on the substrate, a gate stack and a strained material. The substrate includes at least one semiconductor fin and the semiconductor fin includes at least one modulation portion distributed therein. The semiconductor fin is sandwiched by the insulators. The gate stack is disposed over portions of the semiconductor fin and over portions of the insulators. The strained material covers portions of the semiconductor fin that are revealed by the gate stack. In addition, a method for fabricating the FinFET is provided.
Public/Granted literature
- US20170141189A1 FIN FIELD EFFECT TRANSISTOR AND METHOD FOR FABRICATING THE SAME Public/Granted day:2017-05-18
Information query
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