- 专利标题: Semiconductor composition containing iron, dysprosium, and terbium
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申请号: US15194715申请日: 2016-06-28
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公开(公告)号: US09773876B2公开(公告)日: 2017-09-26
- 发明人: Raphael C. Pooser , Benjamin J. Lawrie , Arthur P. Baddorf , Abhinav Malasi , Humaira Taz , Annettee E. Farah , Ramakrishnan Kalyanaraman , Gerd Josef Mansfred Duscher , Maulik K. Patel
- 申请人: UT-Battelle, LLC , University of Tennessee Research Foundation
- 申请人地址: US TN Oak Ridge
- 专利权人: UT-Battelle, LLC
- 当前专利权人: UT-Battelle, LLC
- 当前专利权人地址: US TN Oak Ridge
- 代理商 Edna I. Gergel; Joseph A. Marasco
- 主分类号: C03C4/00
- IPC分类号: C03C4/00 ; H01L29/24 ; H01L29/786 ; C03C3/12 ; C03C17/02 ; C23C14/08
摘要:
An amorphous semiconductor composition includes 1 to 70 atomic percent iron, 15 to 65 atomic percent dysprosium, 15 to 35 atomic percent terbium, balance X, wherein X is at least one of an oxidizing element and a reducing element. The composition has an essentially amorphous microstructure, an optical transmittance of at least 50% in at least the visible spectrum and semiconductor electrical properties.
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