Invention Grant
- Patent Title: Vertical field effect transistor with biaxial stressor layer
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Application No.: US15132960Application Date: 2016-04-19
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Publication No.: US09773904B2Publication Date: 2017-09-26
- Inventor: Borna Obradovic , Chris Bowen , Titash Rakshit , Palle Dharmendar , Mark Rodder
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Myers Bigel, P.A.
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/786 ; H01L29/423 ; H01L29/66 ; H01L21/8234
Abstract:
A vertical field effect device includes a substrate and a vertical channel including InxGa1-xAs on the substrate. The vertical channel includes a pillar that extends from the substrate and includes opposing vertical surfaces. The device further includes a stressor layer on the opposing vertical surfaces of the vertical channel. The stressor layer includes a layer of epitaxial crystalline material that is epitaxially formed on the vertical channel and that has lattice constant in a vertical plane corresponding to one of the opposing vertical surfaces of the vertical channel that is greater than a corresponding lattice constant of the vertical channel.
Public/Granted literature
- US20170077304A1 Vertical Field Effect Transistor with Biaxial Stressor Layer Public/Granted day:2017-03-16
Information query
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