Invention Grant
- Patent Title: Thin film transistor and manufacturing method thereof, display substrate and display device
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Application No.: US14651376Application Date: 2014-10-30
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Publication No.: US09773917B2Publication Date: 2017-09-26
- Inventor: Jiangbo Chen , Dongfang Wang
- Applicant: BOE TECHNOLOGY GROUP CO., LTD.
- Applicant Address: CN Beijing
- Assignee: BOE Technology Group Co., Ltd.
- Current Assignee: BOE Technology Group Co., Ltd.
- Current Assignee Address: CN Beijing
- Agency: Collard & Roe, P.C.
- Priority: CN201410190720 20140507
- International Application: PCT/CN2014/089900 WO 20141030
- International Announcement: WO2015/169069 WO 20151112
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/16 ; H01L29/786 ; C23C14/08 ; C23C14/14 ; C23C14/28 ; C23C14/34 ; C23C16/34 ; C23C16/40 ; H01L21/02 ; H01L27/12 ; H01L29/04 ; H01L29/24 ; H01L29/66
Abstract:
A thin film transistor and a manufacturing method thereof, a display substrate and a display device are provided. The method of manufacturing the thin film transistor comprises forming an active layer (4) having characteristics of crystal orientation of C-axis on a substrate (1) by using indium gallium zinc oxide (InGaO3(ZnO)m), where m≧2. The active layer fabricated with InGaO3(ZnO)m has a good electron mobility, and the quality of the fabricated active layer is improved.
Public/Granted literature
- US20160260834A1 THIN FILM TRANSISTOR AND MANUFACTURING METHOD THEREOF, DISPLAY SUBSTRATE AND DISPLAY DEVICE Public/Granted day:2016-09-08
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