Invention Grant
- Patent Title: Metal oxide TFT with improved stability and mobility
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Application No.: US14753460Application Date: 2015-06-29
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Publication No.: US09773918B2Publication Date: 2017-09-26
- Inventor: Gang Yu , Chan-Long Shieh , Juergen Musolf , Fatt Foong , Tian Xiao
- Applicant: Gang Yu , Chan-Long Shieh , Juergen Musolf , Fatt Foong , Tian Xiao
- Applicant Address: US CA Goleta
- Assignee: CBRITE INC.
- Current Assignee: CBRITE INC.
- Current Assignee Address: US CA Goleta
- Agency: Parsons & Goltry
- Agent Robert A. Parsons; Michael W. Goltry
- Main IPC: H01L29/786
- IPC: H01L29/786 ; H01L21/02 ; H01L23/31 ; H01L23/29 ; H01L29/66 ; H01L29/423
Abstract:
A thin film circuit includes a thin film transistor with a metal oxide semiconductor channel having a conduction band minimum (CBM) with a first energy level. The transistor further includes a layer of passivation material covering at least a portion of the metal oxide semiconductor channel. The passivation material has a conduction band minimum (CBM) with a second energy level. The second energy level being lower than, equal to, or no more than 0.5 eV above the first energy level. The circuit is used for an electronic device including any one of an AMLCD, AMOLED, AMLED, AMEPD.
Public/Granted literature
- US20150303311A1 METAL OXIDE TFT WITH IMPROVED STABILITY AND MOBILITY Public/Granted day:2015-10-22
Information query
IPC分类:
