Invention Grant
- Patent Title: Semiconductor device
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Application No.: US14942831Application Date: 2015-11-16
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Publication No.: US09773936B2Publication Date: 2017-09-26
- Inventor: Hayato Nakano
- Applicant: FUJI ELECTRIC CO., LTD.
- Applicant Address: JP Kawasaki-Shi
- Assignee: FUJI ELECTRIC CO., LTD.
- Current Assignee: FUJI ELECTRIC CO., LTD.
- Current Assignee Address: JP Kawasaki-Shi
- Agency: Rabin & Berdo, P.C.
- Priority: JP2013-117915 20130604
- Main IPC: H01L31/12
- IPC: H01L31/12 ; H01L31/173 ; H01L31/153 ; H01L29/78 ; H01L29/16 ; H01L31/14 ; H01L33/00 ; H01L33/32 ; H01L33/34 ; H01L25/16

Abstract:
A semiconductor device is provided, which has a wide-bandgap semiconductor element, such as a SiC element, and which includes a sensor capable of responding sufficiently to characteristic requirements for protecting and controlling the semiconductor element. The semiconductor device includes a wide-bandgap semiconductor element mounted on a substrate; and a light-receiving element that receives light emitted from the wide-bandgap semiconductor element when the wide-bandgap semiconductor element is in a conduction state.
Public/Granted literature
- US20160071998A1 SEMICONDUCTOR DEVICE Public/Granted day:2016-03-10
Information query
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