Light-emitting device and production method therefor
Abstract:
An emission efficiency of a light-emitting device is improved by reducing strains applied to a light-emitting layer. On a sapphire substrate, an n-type contact layer, an nESD layer, an n-type cladding layer, a light-emitting layer, a p-type cladding layer, and a p-type contact layer, are sequentially deposited. The light-emitting layer has a MQW structure in which a layer unit of a well layer, a capping layer, and a barrier layer sequentially deposited is repeatedly deposited. Of the well layers, the In composition ratio of only first well layer is reduced than the In composition ratios of other well layers, and the In composition ratios of the other well layers are equal to each other. The In composition ratio of the first well layer is designed so that the emission wavelength of the first well layer is equal to the emission wavelengths of other well layers.
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