Invention Grant
- Patent Title: Method of production of a semiconducting structure comprising a strained portion
-
Application No.: US15281785Application Date: 2016-09-30
-
Publication No.: US09774167B2Publication Date: 2017-09-26
- Inventor: Alban Gassenq , Vincent Reboud , Kevin Guilloy , Vincent Calvo , Alexei Tchelnokov
- Applicant: Commissariat a l'energie atomique et aux energies alternatives
- Applicant Address: FR Paris
- Assignee: Commissariat A l'Energie Atomique et aux Energies Alternatives
- Current Assignee: Commissariat A l'Energie Atomique et aux Energies Alternatives
- Current Assignee Address: FR Paris
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: FR1559283 20150930
- Main IPC: H01L21/70
- IPC: H01L21/70 ; H01L21/02 ; H01L33/00 ; H01S5/32 ; H01S5/12 ; H01L33/10 ; H01L33/26 ; H01L29/78 ; H01L29/10 ; H01L33/20 ; H01L21/8234
Abstract:
A method of production of a semiconducting structure including a strained portion tied to a support layer by molecular bonding, including the steps in which a cavity is produced situated under a structured part so as to strain a central portion by lateral portions, and the structured part is placed in contact and molecularly bonded with a support layer, wherein a consolidation annealing is performed, and a distal part of the lateral portions in relation to the strained portion is etched.
Public/Granted literature
- US20170093130A1 METHOD OF PRODUCTION OF A SEMICONDUCTING STRUCTURE COMPRISING A STRAINED PORTION Public/Granted day:2017-03-30
Information query
IPC分类:
