Invention Grant
- Patent Title: Solid state image sensor with enhanced charge capacity and dynamic range
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Application No.: US14561845Application Date: 2014-12-05
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Publication No.: US09774801B2Publication Date: 2017-09-26
- Inventor: Biay-Cheng Hseih , Sergiu Radu Goma
- Applicant: QUALCOMM Incorporated
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM Incorporated
- Current Assignee: QUALCOMM Incorporated
- Current Assignee Address: US CA San Diego
- Agency: Knobe, Martens, Olson & Bear, LLP
- Main IPC: H04N5/225
- IPC: H04N5/225 ; H04N5/355 ; H04N5/232 ; H04N5/235 ; H04N5/3745 ; H04N9/04 ; H01L27/146

Abstract:
Certain aspects relate to imaging systems and methods for manufacturing imaging systems and image sensors. The imaging system includes a pixel array including a plurality of pixels, the pixels configured to generate a charge when exposed to light and disposed on a first layer. The imaging system further includes a plurality of pixel circuits for reading light integrated in the pixels coupled thereto, each of the plurality of pixel circuits comprising one or more transistors shared between a subset of the plurality of the pixels, the one or more transistors disposed on a second layer different than the first layer. The imaging system further includes a plurality of floating diffusion nodes configured to couple each of the plurality of pixels to the plurality of pixel circuits.
Public/Granted literature
- US20160165159A1 SOLID STATE IMAGE SENSOR WITH ENHANCED CHARGE CAPACITY AND DYNAMIC RANGE Public/Granted day:2016-06-09
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