Invention Grant
- Patent Title: Device and method of manufacturing the same
-
Application No.: US15068511Application Date: 2016-03-11
-
Publication No.: US09776854B2Publication Date: 2017-10-03
- Inventor: Akira Fujimoto , Naofumi Nakamura , Tamio Ikehashi
- Applicant: KABUSHIKI KAISHA TOSHIBA
- Applicant Address: JP Tokyo
- Assignee: KABUSHIKI KAISHA TOSHIBA
- Current Assignee: KABUSHIKI KAISHA TOSHIBA
- Current Assignee Address: JP Tokyo
- Agency: Holtz, Holtz & Volek PC
- Priority: JP2015-077048 20150403
- Main IPC: H01L29/786
- IPC: H01L29/786 ; B81B3/00 ; B81C1/00
Abstract:
According to one embodiment, a method of manufacturing a device is provided. A amorphous metal layer is formed. A metal layer containing metal and having a crystal plane oriented to a predetermined plane is formed on the amorphous metal layer. A first layer containing semiconductor including silicon, and metal identical to the metal contained in the metal layer is formed on the metal layer. The first layer is changed to a second layer containing a compound of the semiconductor and the metal, the compound having a crystal plane oriented to the predetermined plane. A third layer containing polycrystalline silicon-germanium and having a crystal plane oriented to the predetermined plane is formed on the second layer.
Public/Granted literature
- US20160289060A1 DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2016-10-06
Information query
IPC分类:
