Invention Grant
- Patent Title: Method of operation for a nonvolatile memory system and method of operating a memory controller
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Application No.: US15352121Application Date: 2016-11-15
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Publication No.: US09778851B2Publication Date: 2017-10-03
- Inventor: Young-Ho Park , Chanik Park
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Volentine & Whitt, PLLC
- Priority: KR10-2015-0171644 20151203
- Main IPC: G11C16/06
- IPC: G11C16/06 ; G06F3/06 ; G11C16/34 ; G11C16/10 ; G11C16/26 ; G06F11/10 ; G11C29/52
Abstract:
A method of operating a nonvolatile memory system including a memory device having a plurality of memory blocks includes selecting a source block among the plurality of memory blocks in the nonvolatile memory system, and performing a reclaim operation for the source block based on the number of program and erase cycles which have been performed on the source block.
Public/Granted literature
- US20170160934A1 METHOD OF OPERATION FOR A NONVOLATILE MEMORY SYSTEM AND METHOD OF OPERATING A MEMORY CONTROLLER Public/Granted day:2017-06-08
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