Invention Grant
- Patent Title: Semiconductor device
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Application No.: US12835273Application Date: 2010-07-13
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Publication No.: US09779679B2Publication Date: 2017-10-03
- Inventor: Atsushi Umezaki , Ryo Arasawa
- Applicant: Atsushi Umezaki , Ryo Arasawa
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Fish & Richardson P.C.
- Priority: JP2009-172949 20090724
- Main IPC: G09G5/02
- IPC: G09G5/02 ; G09G3/36 ; G11C19/18 ; H01L27/12 ; H01L49/02 ; G09G3/3266 ; G09G3/34

Abstract:
It is an object to provide a semiconductor device which can supply a signal with sufficient amplitude to a scan line while power consumption is kept small. Further, it is an object to provide a semiconductor device which can suppress distortion of a signal supplied to the scan line and shorten a rising time and a falling time while power consumption is kept small. A semiconductor device which includes a plurality of pixels each including a display element and at least one first transistor and a scan line driver circuit supplying a signal for selecting the plurality of pixels to a scan line. A light-transmitting conductive layer is used for a pixel electrode layer of the display element, a gate electrode layer of the first transistor, source and drain electrode layers of the first transistor, and the scan line. The scan line driver circuit includes a second transistor and a capacitor for holding a voltage between a gate electrode layer of the second transistor and a source electrode layer of the second transistor. The source electrode of the second transistor is connected to the scan line.
Public/Granted literature
- US20110018915A1 SEMICONDUCTOR DEVICE Public/Granted day:2011-01-27
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