Invention Grant
- Patent Title: Memory having memory cell string and coupling components
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Application No.: US14828185Application Date: 2015-08-17
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Publication No.: US09780110B2Publication Date: 2017-10-03
- Inventor: Toru Tanzawa
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology
- Current Assignee: Micron Technology
- Current Assignee Address: US ID Boise
- Agency: Schwegman Lundberg & Woessner, P.A.
- Main IPC: H01L27/115
- IPC: H01L27/115 ; H01L27/11582 ; H01L27/11556 ; H01L23/528 ; H01L27/11524 ; H01L27/1157 ; G11C16/08 ; G11C16/10 ; G11C5/06
Abstract:
Some embodiments include apparatuses and methods having a conductive line, a memory cell string including memory cells located in different levels the apparatus, and a select circuit including a select transistor and a coupling component coupled between the conductive line and the memory cell string. Other embodiments including additional apparatuses and methods are described.
Public/Granted literature
- US20150357344A1 MEMORY HAVING MEMORY CELL STRING AND COUPLING COMPONENTS Public/Granted day:2015-12-10
Information query
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