A semiconductor arrangement and a method for manufacturing the same. An arrangement may include a bulk semiconductor substrate; a fin formed on the substrate; a first FinFET and a second FinFET formed on the substrate. The first FinFET comprises a first gate stack intersecting the fin and a first gate spacer disposed on sidewalls of the first gate stack. The second FinFET includes a second gate stack intersecting the fin and a second gate spacer disposed on sidewalls of the second gate stack; a dummy gate spacer formed between the first FinFET and the second FinFET and intersecting the fin; an isolation section self-aligned to a space defined by the dummy gate spacer. The isolation section electrically isolates the first FinFET from the second FinFET; and an insulation layer disposed under and abutting the isolation section.