Invention Grant
- Patent Title: Light-emitting diode and method for manufacturing light-emitting diode
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Application No.: US14426455Application Date: 2014-12-12
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Publication No.: US09780272B2Publication Date: 2017-10-03
- Inventor: Gege Zhou
- Applicant: Shenzhen China Star Optoelectronics Technology Co., Ltd.
- Applicant Address: CN Shenzhen, Guangdong
- Assignee: Shenzhen China Star Optoelectronics Technology Co., Ltd
- Current Assignee: Shenzhen China Star Optoelectronics Technology Co., Ltd
- Current Assignee Address: CN Shenzhen, Guangdong
- Agent Andrew C. Cheng
- Priority: CN201410723053 20141202
- International Application: PCT/CN2014/093702 WO 20141212
- International Announcement: WO2016/086446 WO 20160609
- Main IPC: H01L33/00
- IPC: H01L33/00 ; H01L27/15 ; H01L33/62 ; H01L33/54 ; H01L33/50 ; H01L33/56 ; H01L33/48

Abstract:
Disclosed are a light-emitting diode and a method for manufacturing a light-emitting diode. The method includes: a base layer; a circuit layer formed on the base layer; a light-emitting chip formed on the circuit layer; electrode pads formed on the base layer and electrically connected to the light-emitting chip so that the electrode pads and the circuit layer and the light-emitting chip are spaced from each other by first spacing distances and the electrode pads and the circuit layer and the light-emitting chip define therebetween first grooves, where an altitude of the electrode pad is equal to an altitude of the light-emitting chip; and a phosphor powder contained package layer formed on the light-emitting chip and the electrode pads and filled into the first grooves between the electrode pads and the circuit layer to form a uniform dome shape.
Public/Granted literature
- US20160343923A1 LIGHT-EMITTING DIODE AND METHOD FOR MANUFACTURING LIGHT-EMITTING DIODE Public/Granted day:2016-11-24
Information query
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