- 专利标题： Photoresist film placing method, semiconductor device manufacturing method, electro-optical device, and electronic device
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申请号： US14681344申请日： 2015-04-08
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公开(公告)号： US09786501B2公开(公告)日： 2017-10-10
- 发明人: Hiroshi Sera , Yoshiki Nakashima
- 申请人： SEIKO EPSON CORPORATION
- 申请人地址： JP Tokyo
- 专利权人： Seiko Epson Corporation
- 当前专利权人： Seiko Epson Corporation
- 当前专利权人地址： JP Tokyo
- 代理机构： Global IP Counselors, LLP
- 优先权： JP2014-082547 20140414
- 主分类号： G03F7/38
- IPC分类号： G03F7/38 ; H01L21/027 ; G03F7/40 ; G03F7/00
摘要：
A method for placing a resist film of a region having a small film thickness with good shape accuracy is provided. The method has processes of placing a photoresist film 15 on a substrate body 10, exposing the photoresist film 15 using a halftone mask 30 having light transmittances of three or more tones, and developing the photoresist film 15. The photoresist film 15 after the development has a first photoresist film 16 and a second photoresist film 17 that is thicker than the first photoresist film 16. On the substrate body 10 after the development, the second photoresist film 17 is placed at a location where the second photoresist film 17 can be placed without removing the photoresist film 15.
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