Invention Grant
- Patent Title: Non-volatile memory devices including charge storage layers
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Application No.: US15043640Application Date: 2016-02-15
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Publication No.: US09786675B2Publication Date: 2017-10-10
- Inventor: Jaehun Jung , Zhiliang Xia , Daewoong Kang , Dae Sin Kim , Kwang Soo Seol , Homin Son , Seunghyun Lim
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Volentine & Whitt, PLLC
- Priority: KR10-2015-0023351 20150216
- Main IPC: H01L29/788
- IPC: H01L29/788 ; H01L27/11568 ; H01L29/423 ; H01L29/792

Abstract:
A non-volatile memory device includes gate electrodes stacked on a substrate, a semiconductor pattern penetrating the gate electrodes and connected to the substrate, and a charge storage layer between the semiconductor pattern and the gate electrodes. The charge storage layer includes a first charge storage layer between the semiconductor pattern and the gate electrodes, a second charge storage layer between the first charge storage layer and the semiconductor pattern, and a third charge storage layer between the first charge storage layer and the gate electrodes. An energy band gap of the first charge storage layer is smaller than those of the second and third charge storage layers. The first charge storage layer is thicker than the second and third charge storage layers.
Public/Granted literature
- US20160240550A1 NON-VOLATILE MEMORY DEVICES INCLUDING CHARGE STORAGE LAYERS Public/Granted day:2016-08-18
Information query
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