Invention Grant
- Patent Title: Vacuum-processing apparatus, vacuum-processing method, and storage medium
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Application No.: US14403833Application Date: 2013-04-30
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Publication No.: US09790590B2Publication Date: 2017-10-17
- Inventor: Shinji Furukawa , Atsushi Gomi , Tetsuya Miyashita , Toru Kitada , Kanto Nakamura
- Applicant: TOKYO ELECTRON LIMITED
- Applicant Address: JP Tokyo
- Assignee: TOKYO ELECTRON LIMITED
- Current Assignee: TOKYO ELECTRON LIMITED
- Current Assignee Address: JP Tokyo
- Agency: Nath, Goldberg & Meyer
- Agent Jerald L. Meyer; Annie Kock
- Priority: JP2012-125531 20120531
- International Application: PCT/JP2013/002888 WO 20130430
- International Announcement: WO2013/179575 WO 20131205
- Main IPC: C23C14/34
- IPC: C23C14/34 ; C23C14/14 ; C23C14/35 ; C23C14/56 ; C23C14/58 ; C23C14/08 ; H01J37/34 ; H01L43/12

Abstract:
The present disclosure provides a vacuum-processing apparatus for forming a metal film on a substrate by sputtering targets with ions of plasma, and then oxidizing the metal film, the apparatus including: a first target composed of a material having a property of adsorbing oxygen; a second target composed of a metal; a power supply unit configured to apply a voltage to the targets; a shutter configured to prevent particles generated from one of the targets from adhering to the other of the targets; a shielding member; an oxygen supply unit configured to supply an oxygen-containing gas to the substrate mounted on the mounting unit; and a control unit configured to perform supplying a plasma-generating voltage to the targets and sputtering the targets and supplying the oxygen-containing gas from the oxygen supply unit to the substrate.
Public/Granted literature
- US20150187546A1 Vacuum-Processing Apparatus, Vacuum-Processing Method, and Storage Medium Public/Granted day:2015-07-02
Information query
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