Invention Grant
- Patent Title: Phase change memory current
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Application No.: US14725826Application Date: 2015-05-29
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Publication No.: US09792986B2Publication Date: 2017-10-17
- Inventor: Mase J. Taub , Sandeep K. Guliani , Kiran Pangal , Raymond W. Zeng
- Applicant: Intel Corporation
- Applicant Address: US CA Santa Clara
- Assignee: INTEL CORPORATION
- Current Assignee: INTEL CORPORATION
- Current Assignee Address: US CA Santa Clara
- Agency: Grossman, Tucker, Perreault & Pfleger, PLLC
- Main IPC: G11C11/00
- IPC: G11C11/00 ; G11C13/00

Abstract:
The present disclosure relates to phase change memory current. An apparatus includes a memory controller including a word line (WL) control module and a bit line (BL) control module, the memory controller is to initiate selection of a memory cell. The apparatus further includes a mitigation module to configure a first line selection logic to reduce a transient energy dissipation of the memory cell, the transient energy related to selecting the memory cell.
Public/Granted literature
- US20160351258A1 PHASE CHANGE MEMORY CURRENT Public/Granted day:2016-12-01
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