发明授权
- 专利标题: Electromechanical power switch integrated circuits and devices and methods thereof
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申请号: US15240799申请日: 2016-08-18
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公开(公告)号: US09793080B2公开(公告)日: 2017-10-17
- 发明人: Kiyoshi Mori , Ziep Tran , Giang Trung Dao , Michael Edward Ramon
- 申请人: INOSO, LLC
- 申请人地址: US TX Austin
- 专利权人: INOSO, LLC
- 当前专利权人: INOSO, LLC
- 当前专利权人地址: US TX Austin
- 代理机构: Haynes and Boone, LLP
- 主分类号: B81B3/00
- IPC分类号: B81B3/00 ; H01H59/00 ; H01L27/10 ; H01H49/00 ; H01H1/00
摘要:
An electromechanical power switch device and methods thereof. At least some of the illustrative embodiments are devices including a semiconductor substrate, at least one integrated circuit device on a front surface of the semiconductor substrate, an insulating layer on the at least one integrated circuit device, and an electromechanical power switch on the insulating layer. By way of example, the electromechanical power switch may include a source and a drain, a body region disposed between the source and the drain, and a gate including a switching metal layer. In some embodiments, the body region includes a first body portion and a second body portion spaced a distance from the first body portion and defining a body discontinuity therebetween. Additionally, in various examples, the switching metal layer may be disposed over the body discontinuity.