Invention Grant
- Patent Title: Self-light-emitting device
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Application No.: US15075436Application Date: 2016-03-21
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Publication No.: US09793328B2Publication Date: 2017-10-17
- Inventor: Toshimitsu Konuma , Junya Maruyama
- Applicant: Semiconductor Energy Laboratory Co., Ltd.
- Applicant Address: JP
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP
- Agency: Husch Blackwell LLP
- Priority: JP2000-045256 20000222
- Main IPC: H01L27/12
- IPC: H01L27/12 ; H01L27/32 ; H01L51/00 ; H01L29/786 ; H01L51/52

Abstract:
Failure light emission of an EL element due to failure film formation of an organic EL material in an electrode hole 46 is improved. By forming the organic EL material after embedding an insulator in an electrode hole 46 on a pixel electrode and forming a protective portion 41b, failure film formation in the electrode hole 46 can be prevented. This can prevent concentration of electric current due to a short circuit between a cathode and an anode of the EL element, and can prevent failure light emission of an EL layer.
Public/Granted literature
- US20160204173A1 Self-Light-Emitting Device and Method of Manufacturing the Same Public/Granted day:2016-07-14
Information query
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